650V TRENCH GATE FIELD-STOP IGBT

 DESCRIPTION The UTC UTG4N65-S is an Trench Field-Stop Insulated Gate Bipolar Transistor. it uses UTC’s advanced technology to provide customers with high switching speed, low saturation voltage and low switching loss, etc. The UTC UTG4N65-S is suitable for the resonant or soft switching ap

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UTC

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Power MOSFET

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VBSEMI

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4 Amps, 650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 4N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristic. This power MOSFETis usually used in high speed switching applications includ

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UTC

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N-CHANNEL POWER MOSFET

文件：374.43 Kbytes 页数：9 Pages

UTC

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