UTC2SD1616

NPN EPITAXIAL SILICON TRANSISTOR

UTC2SD1616A

NPN EPITAXIAL SILICON TRANSISTOR

2SD1616

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowVCE(sat) ●ComplementaryTransistorwithThe2SB1116

2SD1616

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.75W(Tamb=25℃) Collectorcurrent ICM:1A Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2SD1616

TO-92Plastic-EncapsulateTransistors

FEATURES LowVCE(sat) ComplementaryTransistorwithThe2SB1116

2SD1616

NPNEPITAXIALSILICONTRANSISTOR

2SD1616

SILICONTRANSISTORS

NPNSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •LowVCE(sat): VCE(sat)=0.15VTYP.(IC=1.0A,IB=50mA) •LargePTinsmalldimensionwithversatility PT=0.75W,VCEO=50/60V,IC(DC)=1.0A •Complementarytransistorwitht

2SD1616

NPNSiliconTransistor

NPNSiliconTransistor The2SD1616/2SD1616Aaredesignedforusein driverandoutputstagesofAFamplifiergeneral purposeapplication. ThetransistorissubdividedintothreegroupsR,O andY,accordingtoitsDCcurrentgain Onspecialrequest,thesetransistorscanbe manufacturedi

2SD1616

NPNSILICONTRANSISTORS

DESCRIPTION The2SD1616/2SD1616AaredesignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplication.

2SD1616

NPNTransistors

NPNTransistors P/bLead(Pb)-Free