丝印：UTC；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 1098~ 1980 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one I/O line (unidirectional) Low clamping voltage Working voltages: 3.3V~48V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (Lighting) 13.8 ~ 100A (8/20μs) IEC61000-4-2 (ESD) ±30kV (air), ±30kV (con

文件：5.10371 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：UTC；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 1098~1980 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one unidirectional I/O line Working Voltages: 3.3V~48V Low clamping voltage Low leakage current IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) IEC61000-4-4 (EFT)

文件：4.85396 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

丝印：UTC4N100；Package：TO-220；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F1；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F2；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F1；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F2；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺

丝印：UTC4N100；Package：TO-220F；null4.0A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 4N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device suitable for use as a load switch or in PWM applications.  FEATURES0 * RDS(ON) ≤ 6.0 Ω @ VGS=10V, ID=2.0A * Low Reverse Transfer Capacitance * Fast Switching Capabi

文件：621.96 Kbytes 页数：9 Pages

UTC

友顺