N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：291.6 Kbytes 页数：7 Pages

UTC

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N-Channel MOSFET uses advanced trench technology

文件：1.11464 Mbytes 页数：4 Pages

DOINGTER

杜因特

N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The UT60T03 can provide excellent RDS(ON) and low gate charge by using UTC’s advanced trench technology. FEATURES * Very simple drive requirement * Very low gate charge * Fast switching

文件：251.22 Kbytes 页数：5 Pages

UTC

友顺

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

文件：291.6 Kbytes 页数：7 Pages

UTC

友顺