丝印：UT4；Package：DFN1610；Transient Voltage Suppressors for ESD Protection

Features 2430 Watts Peak Pulse Power per Line (tp=8/20μs) Protects one date or power line Working voltage: 4.5V RoHS Compliant IEC61000-4-5 (Lightning) 135A (8/20ns) IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) Applications Mobile Phones Battery Protection Power Line Protection Vba

文件：3.14058 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR

DESCRIPTION The UTC UT40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed

文件：129.75 Kbytes 页数：3 Pages

UTC

友顺

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIDLD EFFECT TRANSISTOR

DESCRIPTION The UTC UT40N04 is an N-channel enhancement mode FET using advanced technology to provide fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES * Low on-Resistance * Fast Switching Speed

文件：129.75 Kbytes 页数：3 Pages

UTC

友顺

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：472.09 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.85 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

RECTIFIERS

文件：139.69 Kbytes 页数：3 Pages

Microsemi

美高森美

Standard Recovery, 2 Amp to 4 Amp

文件：92.71 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

STANDARD RECOVERY RECTIFIERS

文件：157.42 Kbytes 页数：3 Pages

DIGITRON

RECTIFIERS

文件：139.69 Kbytes 页数：3 Pages

Microsemi

美高森美

STANDARD RECOVERY RECTIFIERS

文件：157.42 Kbytes 页数：3 Pages

DIGITRON