P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A

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友顺

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件：228.25 Kbytes 页数：4 Pages

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SOT-23

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SOT-23

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SOT-23

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