UT28F256中文资料Radiation-Hardened 32K x 8 PROM数据手册CAES(Cobham)规格书

描述 Description

The UT28F256 amorphous silicon anti-fuse PROM is a high performance, asynchronous, radiation-hardened,32K x 8 programmable memory device. The UT28F256 PROM features fully asychronous operation requiring no external clocks or timing strobes. An advanced radiation-hardened twin-well CMOS process technology is used to implement the UT28F256. The combination of radiation-hardness, fast access time, and low power consumption make the UT28F256 ideal for high speed systems designed for operation in radiation environments.

特性 Features

Programmable, read-only, asynchronous, radiation hardened, 32K x 8 memory
- Supported by industry standard programmer
45ns and 40ns maximum address access time (-55oC to +125oC)
TTL compatible input and TTL/CMOS compatible output levels
Three-state data bus
Low operating and standby current
- Operating: 125mA maximum @25MHz
· Derating: 3mA/MHz
- Standby: 2mA maximum (post-rad)
Radiation-hardened process and design; total dose irradiation testing to MIL-STD-883, Method 1019
- Total dose: 1E6 rad(Si)
- LETTH(0.25) ~ 100 MeV-cm2/mg
- SEL Immune >128 MeV-cm2/mg
- Saturated Cross Section cm2 per bit, 1.0E-11
- 1.2E-8 errors/device-day, Adams 90% geosynchronous heavy ion
- Memory cell LET threshold: >128 MeV-cm2/mg
QML Q & V compliant part
- AC and DC testing at factory
Packaging options:
- 28-lead 50-mil center flatpack (0.490 x 0.74)
- 28-lead 100-mil center DIP (0.600 x 1.4) - contact factory
VDD: 5.0 volts + 10%
Standard Microcircuit Drawing 5962-96891