UT12N10L-TN3-R数据表ic资料原装现货友顺-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UT12N10L-TN3-R	文件：150.63 Kbytes Page：4 Pages	12 Amps, 100 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC UT12N10 is an N-channel mode Power FET using UTC’s advanced technology to provide custumers with minimum on-state resistance by extremely high dense cell design. Moreover, it‘ s good at handing high power and current. FEATURES * RDS(ON) 文件：150.63 Kbytes 页数：4 Pages	UTC 友顺	UTC
UT12N10L-TN3-R	文件：1.01134 Mbytes Page：7 Pages	N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch 文件：1.01134 Mbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
UT12N10L-TN3-R	文件：184.93 Kbytes Page：3 Pages	N-CHANNEL POWER MOSFET 文件：184.93 Kbytes 页数：3 Pages	UTC 友顺	UTC
UT12N10L-TN3-T	文件：1.01037 Mbytes Page：7 Pages	N-Channel 100 V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch 文件：1.01037 Mbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI

更多UT12N10L-TN3-R供应商更新时间2025-10-12 14:02:00