USB10P中文资料仙童半导体数据手册PDF规格书

General Description

This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

■ -4.5 A, -20 V. RDS(ON) = 0.045 Ω @ VGS = -4.5 V

RDS(ON) = 0.065 Ω @ VGS = -2.5 V.

■ Low gate charge (13nC typical).

■ High performance trench technology for extremely low RDS(ON).

■ SuperSOTTM-6 package: small footprint (72 smaller than standard SO-8); low profile (1mm thick).