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VB1210

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®GenIIIPowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA1210

N-Channel20V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBA1210

N-Channel20V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VDA1210CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VDA1210NTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

ANASEMAnaSem Hong Kong Limited.

安纳森半导体安纳森半导体香港有限公司

VJ1210

SurfaceMountMultilayerCeramicChipCapacitorsforTCCCriticalApplications

VishayVishay Siliconix

威世科技威世科技半导体

VJ1210

SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications

VishayVishay Siliconix

威世科技威世科技半导体

VJ1210

SurfaceMountMultilayerCeramicChipCapacitorsforHighReliabilityApplications

VishayVishay Siliconix

威世科技威世科技半导体

VJ1210

MultilayerCeramicChipCapacitors

VishayVishay Siliconix

威世科技威世科技半导体

VJ1210

SurfaceMountMultilayerCeramicChipCapacitorSolutionsforBoardflexSensitiveApplications

VishayVishay Siliconix

威世科技威世科技半导体

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