首页 >USB-EL1210A>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-Channel20V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®GenIIIPowerMOSFET •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel20V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
SurfaceMountMultilayerCeramicChipCapacitorsforTCCCriticalApplications | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforCommercialApplications | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorsforHighReliabilityApplications | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
MultilayerCeramicChipCapacitors | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
SurfaceMountMultilayerCeramicChipCapacitorSolutionsforBoardflexSensitiveApplications | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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