UPG2310TK-A

Package：6-SMD，扁平引线；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC AMP BRDCAST RAD 2.32GHZ 6MINI

UTR2310

RECTIFIERS

DESCRIPTION Smallsizeandhighsurgecapabilitymakethisseriesofpowerswitchingrectifiersdesirableforpowersupplieswheresize,weightandreliabilityareimportant. FEATURES ●ContinuousRating:to4A ●ControlledAvalanche ●SurgeRating:to100A ●PIV:to600V ●MiniaturePackag

UTR2310

FASTRECOVERYRECTIFIERS

VBA2310

P-Channel30-V(D-S)MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •LoadSwitch •NotebookAdaptorSwitch

VBZ2310

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverter

VDA2310CTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

VDA2310NTA

Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector

GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein

WNM2310

IntegratedN-ChannelPowerMOSFETAndSchottkyBarrierDiode

WT2310

N-ChannelEnhancementModePowerMOSFET

DRAINCURRENT3AMPERS DRAINSOUCEVOLTAGE60VOLTAGE Features: *SuperHighDenseCellDesignForLowRDS(ON) RDS(ON)

WTC2310

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter