UPG2160T5K-E2RF/IF射频/中频RFID的射频开关规格书PDF中文资料

厂商型号	UPG2160T5K-E2
参数属性	UPG2160T5K-E2 封装/外壳为6-PowerXDFN；包装为卷带（TR）；类别为RF/IF射频/中频RFID的射频开关；产品描述：IC RF SWITCH SPDT 3GHZ 6TSSON
功能描述	GaAs INTEGRATED CIRCUIT
丝印标识	G4
封装外壳	TSSON / 6-PowerXDFN
文件大小	387.54 Kbytes
页面数量	14 页
生产厂商	Renesas Technology Corp
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-1 20:07:00
人工找货	UPG2160T5K-E2价格和库存，欢迎联系客服免费人工找货

FEATURES

• Supply voltage : VDD = 2.4 to 2.8 V (2.6 V TYP.)

• Switch control voltage : Vcont (H) = 2.4 to VDD (2.6 V TYP.)

: Vcont (L) = −0.2 to 0.2 V (0 V TYP.)

• Low insertion loss : Lins1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

: Lins2 = 0.35 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

: Lins3 = 0.40 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

: Lins4 = 0.50 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

• High isolation : ISL1 = 25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

: ISL2 = 18 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

: ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

: ISL4 = 13 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

• Handling power : Pin (0.1 dB) = +21.0 dBm TYP. @ f = 2.0/2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V

• High-density surface mounting : 6-pin plastic TSSON package (1.0 × 1.0 × 0.37 mm)