MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1 024 bytes • Internal expansion RAM: 1 024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5

文件：733.9 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1 024 bytes • Internal expansion RAM: 1 024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5

文件：733.9 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1 024 bytes • Internal expansion RAM: 1 024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5

文件：733.9 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1 024 bytes • Internal expansion RAM: 1 024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5

文件：733.9 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1 024 bytes • Internal expansion RAM: 1 024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5

文件：733.9 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1024 bytes • Internal expansion RAM: 1024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5.5 V

文件：761.3 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1024 bytes • Internal expansion RAM: 1024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5.5 V

文件：761.3 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1024 bytes • Internal expansion RAM: 1024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5.5 V

文件：761.3 Kbytes 页数：85 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin-compatible with mask ROM version (except VPP pin) • Internal PROM: 60 KbytesNote 1 • Internal high-speed RAM: 1024 bytes • Internal expansion RAM: 1024 bytesNote 2 • Internal buffer RAM: 32 bytes • Operable in the same supply voltage as the mask ROM version (VDD = 1.8 to 5.5 V

文件：761.3 Kbytes 页数：85 Pages

RENESAS

瑞萨