MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduction version (overall peak level reduced by 5 to 10 dB) • Pin compatible with mask ROM versions (except the VPP pin) • Internal PROM : 60 KbytesNote 1 Programmable once only (ideal for small-scale production) • Internal high-speed RAM : 1024 bytes • Internal expansi

文件：499.82 Kbytes 页数：76 Pages

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MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduction version (overall peak level reduced by 5 to 10 dB) • Pin compatible with mask ROM versions (except the VPP pin) • Internal PROM : 60 KbytesNote 1 Programmable once only (ideal for small-scale production) • Internal high-speed RAM : 1024 bytes • Internal expansi

文件：499.82 Kbytes 页数：76 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin compatible with mask ROM versions (except the VPP pin) • Internal PROM: 60 KbytesNote 1 • mPD78P058YKK-T: Reprogrammable (ideal for system evaluation) • mPD78P058YGC: Programmable once only (ideal for small-lot production) • Internal high-speed RAM: 1024 bytesNote 1 • Internal

文件：540.1 Kbytes 页数：78 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Pin compatible with mask ROM versions (except the VPP pin) • Internal PROM: 60 KbytesNote 1 • mPD78P058YKK-T: Reprogrammable (ideal for system evaluation) • mPD78P058YGC: Programmable once only (ideal for small-lot production) • Internal high-speed RAM: 1024 bytesNote 1 • Internal

文件：540.1 Kbytes 页数：78 Pages

RENESAS

瑞萨