MOS INTEGRATED CIRCUIT

FEATURES • EMI noise reduced version • Internal high capacity ROM and RAM • External memory expansion space: 64 Kbytes • Minimum instruction execution time can be varied from high-speed (0.48 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-drain: 4) • IEBus controller • Effectiv

文件：523.46 Kbytes 页数：76 Pages

RENESAS

瑞萨

20 (19/32) AWG Tinned Copper

文件：408.1 Kbytes 页数：4 Pages

ALPHAWIREAlpha Wire

阿尔法电线

MOS INTEGRATED CIRCUIT

FEATURES • Internal high capacity ROM and RAM • External memory expansion space: 64 Kbytes • Instruction execution time can be varied from high-speed (0.5 ms) to ultra-low-speed (122 ms) • I/O ports: 69 (N-ch open-drain: 4) • IEBus controller • Effective transmission rate: 3.9 kbps/17 kbps/

文件：507.91 Kbytes 页数：74 Pages

RENESAS

瑞萨

RENESAS
DIP

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

RENESAS
DIP

RENESAS

瑞萨

上传：深圳市正纳电子有限公司