4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：316.27 Kbytes 页数：74 Pages

NEC

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MOS INTEGRATED CIRCUIT

FEATURES • Low-voltage operation: VDD = 1.8 to 5.5 V • Internal memory Program memory (ROM): 2048 × 8 bits (μPD754302, 754302(A)) 4096 × 8 bits (μPD754304, 754304(A)) Data memory (RAM): 256 × 4 bits • Variable instruction execution time effective for highspeed operation and power saving 0

文件：579.23 Kbytes 页数：75 Pages

RENESAS

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4-BIT SINGLE-CHIP MICROCONTROLLER

The µPD754302, 754304, and 75P4308 are 4-bit single-chip microcontrollers in the NEC’s 75XL series, a successor to the 75X series that boasts a wealth of variations. These three devices are called the µPD754304 subseries as a general term. The 75XL Series is the successor to the 75X Series CPUs and

Renesas

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：316.27 Kbytes 页数：74 Pages

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：316.27 Kbytes 页数：74 Pages

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：316.27 Kbytes 页数：74 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low-voltage operation: VDD = 1.8 to 5.5 V • Internal memory Program memory (ROM): 2048 × 8 bits (μPD754302, 754302(A)) 4096 × 8 bits (μPD754304, 754304(A)) Data memory (RAM): 256 × 4 bits • Variable instruction execution time effective for highspeed operation and power saving 0

文件：579.23 Kbytes 页数：75 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low-voltage operation: VDD = 1.8 to 5.5 V • Internal memory Program memory (ROM): 2048 × 8 bits (μPD754302, 754302(A)) 4096 × 8 bits (μPD754304, 754304(A)) Data memory (RAM): 256 × 4 bits • Variable instruction execution time effective for highspeed operation and power saving 0

文件：579.23 Kbytes 页数：75 Pages

RENESAS

瑞萨