4-BIT SINGLE-CHIP MICROCONTROLLER

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

文件：751.09 Kbytes 页数：100 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

文件：751.09 Kbytes 页数：100 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Low voltage operation: VDD = 1.8 to 5.5 V • Can be driven by two 1.5 V batteries • Internal memory • Program memory (ROM): 4096 × 8 bits (μPD753104) 6144 × 8 bits (μPD753106) 8192 × 8 bits (μPD753108) • Data memory (RAM): 512 × 4 bits • Capable of high-speed operation and vari

文件：751.09 Kbytes 页数：100 Pages

RENESAS

瑞萨