MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

文件：622.14 Kbytes 页数：85 Pages

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瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：460.46 Kbytes 页数：82 Pages

NEC

瑞萨

4-BIT SINGLE-CHIP MICROCONTROLLERS

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：460.46 Kbytes 页数：82 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

Features O Low-voltage operation: VDD = 1.8 to 5.5 V O On-chip memory • Program memory (ROM): 4096 × 8 bits (μPD750064, 750064(A)) 6144 × 8 bits (μPD750066, 750066(A)) 8192 × 8 bits (μPD750068, 750068(A)) • Data memory (RAM): 512 × 4 bits

文件：622.14 Kbytes 页数：85 Pages

RENESAS

瑞萨