MOS INTEGRATED CIRCUIT

FEATURES • Program memory (ROM): 4,074 × 10 bits • Data memory (RAM): 128 × 4 bits • On-chip carrier generator for infrared remote control: Each high-/low-level width can be set from 250 ns to 64 μs (@ fX = 4 MHz operation) via modulo registers • 9-bit programmable timer: 1 channel • Instruc

文件：576.8 Kbytes 页数：75 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Program memory (ROM): 4,074 × 10 bits • Data memory (RAM): 128 × 4 bits • On-chip carrier generator for infrared remote control: Each high-/low-level width can be set from 250 ns to 64 μs (@ fX = 4 MHz operation) via modulo registers • 9-bit programmable timer: 1 channel • Instruc

文件：576.8 Kbytes 页数：75 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Program memory (ROM): 4,074 × 10 bits • Data memory (RAM): 128 × 4 bits • On-chip carrier generator for infrared remote control: Each high-/low-level width can be set from 250 ns to 64 μs (@ fX = 4 MHz operation) via modulo registers • 9-bit programmable timer: 1 channel • Instruc

文件：576.8 Kbytes 页数：75 Pages

RENESAS

瑞萨

QFP

RENESAS/瑞萨

上传：深圳市中飞凌科技有限公司

QFP

NEC

瑞萨

上传：上海世强芯半导体有限公司