UPD5702TU-A数据手册RF/IF射频/中频RFID的射频放大器规格书PDF

描述 Description

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT
FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONSDESCRIPTION
The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin L2MM (Lead Less Mini Mold) plastic package.FEATURES
• Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage : VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.APPLICATIONS
• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)TI

特性 Features

• Output Power : Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V
: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V
• Single Supply voltage : VDS = 3.0 V TYP.
• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

应用 Application

• 1.9 GHz applications (Example : PHS etc.)
• 2.4 GHz applications (Example : Wireless LAN etc.)TI

简介

UPD5702TU-A属于RF/IF射频/中频RFID的射频放大器。由制造生产的UPD5702TU-A射频放大器在射频应用中，射频放大器产品可用于信号增益和缓冲。这些产品与通用运算放大器的不同之处在于，它们通常适用于更高的频率，更倾向于提供不可调节的固定增益，并且输入或输出阻抗值符合常用传输线特性阻抗。