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UPD48288209A

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E18-DW1

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E18-DW1-A

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E24-DW1

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E24-DW1-A

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E25-DW1

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E25-DW1-A

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E33-DW1

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AFF-E33-DW1-A

288M-BIT Low Laten cy DRAM Common I/O

Features •SRAM-typeinterface •Double-data-ratearchitecture •PLLcircuitry •Cycletime:1.875ns@tRC=15ns 2.5ns@tRC=15ns 2.5ns@tRC=20ns 3.3ns@tRC=20ns •Non-multiplexedaddresses •Multiplexingoptionisavailable. •DatamaskforWRITEcommands •Differentia

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AF1

288M-BIT Low Latency DRAM

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD48288209AF1-E24-DW1-A

288M-BIT Low Latency DRAM

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
18+
BGA
13075
全新原装现货,可出样品,可开增值税发票
询价
23+
N/A
49500
正品授权货源可靠
询价
原装RENESAS
23+
BGA
30000
代理全新原装现货,价格优势
询价
RENESAS/瑞萨
23+
BGA
25500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
REN
2021+
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
RENESAS
21+
BGA
1000
原装现货假一赔十
询价
Renesas Electronics America In
21+
NA
12000
正品专卖,进口原装深圳现货
询价
Renesa
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
原装RENESAS
22+
BGA
32350
原装正品 假一罚十 公司现货
询价
RENESAS/瑞萨
22+
BGA
9600
原装现货,优势供应,支持实单!
询价
更多UPD48288209A供应商 更新时间2024-5-14 10:30:00