UPD46365362BF1-E33-EQ1-A资料使用说明书市场行情-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD46365362BF1-E33-EQ1-A	文件：619.5 Kbytes Page：36 Pages	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：619.5 Kbytes 页数：36 Pages	RENESAS 瑞萨	RENESAS
UPD46365362BF1-E33-EQ1-A	文件：300 bytes Page：1 Pages	Memory-QDRII/DDRII/ QDRII+/DDRII+ SRAM	Renesas 瑞萨	Renesas
PD46365362BF1-E33-EQ1	文件：619.92 Kbytes Page：36 Pages	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION 文件：619.92 Kbytes 页数：36 Pages	RENESAS 瑞萨	RENESAS
PD46365362BF1-E33-EQ1-A	文件：619.92 Kbytes Page：36 Pages	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION 文件：619.92 Kbytes 页数：36 Pages	RENESAS 瑞萨	RENESAS
UPD46365362BF1-E33-EQ1	文件：619.5 Kbytes Page：36 Pages	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：619.5 Kbytes 页数：36 Pages	RENESAS 瑞萨	RENESAS

更多UPD46365362BF1-E33-EQ1-A供应商更新时间2025-10-5 22:30:00