18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE oper

文件：597.61 Kbytes 页数：39 Pages

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18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE oper

文件：597.61 Kbytes 页数：39 Pages

RENESAS

瑞萨

Memory-QDRII/DDRII/ QDRII+/DDRII+ SRAM

Renesas

瑞萨

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

文件：598.03 Kbytes 页数：39 Pages

RENESAS

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