64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive

文件：1.04801 Mbytes 页数：84 Pages

NEC

瑞萨

64M-bit Synchronous DRAM 4-bank, LVTTL

Renesas

瑞萨

64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive

文件：1.04801 Mbytes 页数：84 Pages

NEC

瑞萨

64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive

文件：1.04801 Mbytes 页数：84 Pages

NEC

瑞萨

64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive

文件：1.04801 Mbytes 页数：84 Pages

NEC

瑞萨

64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive

文件：1.04801 Mbytes 页数：84 Pages

NEC

瑞萨

64M-bit Synchronous DRAM 4-bank, LVTTL

Description The µPD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as 524,288 words × 32 bits × 4 banks. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All inputs and outputs are synchronized with the positive

文件：1.04801 Mbytes 页数：84 Pages

NEC

瑞萨