MOS INTEGRATED CIRCUIT

Features • 524,288 words by 16 bits organization • Fast access time: 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention : 1.0 V (MIN.) • Ope

文件：721.86 Kbytes 页数：26 Pages

RENESAS

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MOS INTEGRATED CIRCUIT

Features • 524,288 words by 16 bits organization • Fast access time: 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention : 1.0 V (MIN.) • Ope

文件：721.86 Kbytes 页数：26 Pages

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8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION

Description The µPD448012-X is a high speed, low power, 8,388,608 bits (524,288 words by 16 bits) CMOS static RAM. The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity. The µPD448012-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent). Features •524,288 words

文件：147.11 Kbytes 页数：24 Pages

NEC

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MOS INTEGRATED CIRCUIT

Features • 524,288 words by 16 bits organization • Fast access time: 55, 70, 85, 100, 120 ns (MAX.) • Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16) • Low voltage operation (B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V) • Low VCC data retention : 1.0 V (MIN.) • Ope

文件：721.86 Kbytes 页数：26 Pages

RENESAS

瑞萨