MOS INTEGRATED CIRCUIT

Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation

文件：596.31 Kbytes 页数：42 Pages

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36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (15 x 17) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation

文件：446.81 Kbytes 页数：40 Pages

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瑞萨

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SOT563

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上传：深圳市正纳电子有限公司

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HTSSOT16

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上传：深圳市正纳电子有限公司

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HTSSOP16

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瑞萨

上传：深圳市正纳电子有限公司