UPD44325184BF5-E40-FQ1-A数据表ic资料供应价格-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD44325184BF5-E40-FQ1-A	文件：446.81 Kbytes Page：40 Pages	36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (15 x 17) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：446.81 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS
UPD44325184BF5-E40-FQ1-A	文件：300 bytes Page：1 Pages	Memory-QDRII/DDRII/ QDRII+/DDRII+ SRAM	Renesas 瑞萨	Renesas
PD44325184BF5-E40-FQ1	文件：458.6 Kbytes Page：40 Pages	36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION 文件：458.6 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS
PD44325184BF5-E40-FQ1-A	文件：458.6 Kbytes Page：40 Pages	36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION 文件：458.6 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS
UPD44325184BF5-E40-FQ1	文件：446.81 Kbytes Page：40 Pages	36M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (15 x 17) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：446.81 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS

更多UPD44325184BF5-E40-FQ1-A供应商更新时间2025-10-6 16:50:00