UPD44325092BF5-E35-FQ1-A资料datasheet下载-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD44325092BF5-E35-FQ1-A	文件：393.02 Kbytes Page：36 Pages	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (15 x 17) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：393.02 Kbytes 页数：36 Pages	RENESAS 瑞萨	RENESAS
UPD44325092BF5-E35-FQ1-A	文件：300 bytes Page：1 Pages	Memory-QDRII/DDRII/ QDRII+/DDRII+ SRAM	Renesas 瑞萨	Renesas
UPD44325092BF5-E35-FQ1	文件：393.02 Kbytes Page：36 Pages	36M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (15 x 17) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：393.02 Kbytes 页数：36 Pages	RENESAS 瑞萨	RENESAS
UPD5713TK-E2-A	文件：0 bytes Page：0 Pages	RENESAS SOT563	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
UPD5716GR-E1-A	文件：0 bytes Page：0 Pages	RENESAS HTSSOT16	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多UPD44325092BF5-E35-FQ1-A供应商更新时间2025-10-5 15:01:00