UPD44165364BF5-E50-EQ3-A说明书PDF资料库存现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD44165364BF5-E50-EQ3-A	文件：491.83 Kbytes Page：40 Pages	18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：491.83 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS
UPD44165364BF5-E50-EQ3-A	文件：300 bytes Page：1 Pages	Memory-QDRII/DDRII/ QDRII+/DDRII+ SRAM	Renesas 瑞萨	Renesas
PD44165364BF5-E50-EQ3	文件：503.62 Kbytes Page：40 Pages	18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION 文件：503.62 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS
PD44165364BF5-E50-EQ3-A	文件：503.62 Kbytes Page：40 Pages	18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION 文件：503.62 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS
UPD44165364BF5-E50-EQ3	文件：491.83 Kbytes Page：40 Pages	18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Separate independent read and write data ports with concurrent transactions • 100 bus utilization DDR READ and WRITE operation 文件：491.83 Kbytes 页数：40 Pages	RENESAS 瑞萨	RENESAS

更多UPD44165364BF5-E50-EQ3-A供应商更新时间2025-10-5 10:16:00