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UPD44165094B

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E33-EQ3

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E33-EQ3-A

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E35-EQ3

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E35-EQ3-A

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E40-EQ3

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E40-EQ3-A

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E50-EQ3

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E50-EQ3-A

18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION

Features •1.8±0.1Vpowersupply •165-pinPLASTICBGA(13x15) •HSTLinterface •PLLcircuitryforwideoutputdatavalidwindowandfuturefrequencyscaling •Separateindependentreadandwritedataportswithconcurrenttransactions •100busutilizationDDRREADandWRITEoperation

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

UPD44165094BF5-E35-EQ3-A

Memory-QDRII/DDRII/ QDRII+/DDRII+ SRAM;

Renesas

瑞萨

Renesas

技术参数

  • Density (Mbits):

    18

  • Architecture:

    QDR-II

  • Burst Length (words):

    4

  • Read Latency (Clock):

    1.5

  • Data Width (bits):

    9

  • MAX Frequency (MHz):

    300

  • MIN Frequency (MHz):

    120

  • Package Body Size:

    13x15mm

  • Operation Temp (degC):

    Ta=0 to 70

  • Production Status:

    EOL

供应商型号品牌批号封装库存备注价格
RENESAS
22+
NA
500000
万三科技,秉承原装,购芯无忧
询价
原厂正品
23+
SOP/DIP
5000
原装正品,假一罚十
询价
NEC
BGA
1200
正品原装--自家现货-实单可谈
询价
NEC
24+
BGA
30000
一级代理原装现货假一罚十
询价
NEC
23+
BGA
8650
受权代理!全新原装现货特价热卖!
询价
NEC
08+
BGA
40
原装正品现货,可开发票,假一赔十
询价
NEC
20+
BGA
11520
特价全新原装公司现货
询价
23+
69820
终端可以免费供样,支持BOM配单!
询价
NEC
24+
BGA
65300
一级代理/放心采购
询价
NEC
23+
BGA
24981
原装正品代理渠道价格优势
询价
更多UPD44165094B供应商 更新时间2025-7-28 15:48:00