UPD44164362BF5-E35-EQ3-A数据表ic资料库存现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD44164362BF5-E35-EQ3-A	文件：517.15 Kbytes Page：35 Pages	18M-BIT DDR II SRAM 2-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Pipelined double data rate operation • Common data input/output bus • Two-tick burst for low DDR transaction size • Two inpu 文件：517.15 Kbytes 页数：35 Pages	RENESAS 瑞萨	RENESAS
UPD44164362BF5-E35-EQ3-A	文件：300 bytes Page：1 Pages	Memory-QDRII/DDRII/ QDRII+/DDRII+ SRAM	Renesas 瑞萨	Renesas
PD44164362BF5-E35-EQ3	文件：528.94 Kbytes Page：35 Pages	18M-BIT DDR II SRAM 2-WORD BURST OPERATION 文件：528.94 Kbytes 页数：35 Pages	RENESAS 瑞萨	RENESAS
PD44164362BF5-E35-EQ3-A	文件：528.94 Kbytes Page：35 Pages	18M-BIT DDR II SRAM 2-WORD BURST OPERATION 文件：528.94 Kbytes 页数：35 Pages	RENESAS 瑞萨	RENESAS
UPD44164362BF5-E35-EQ3	文件：517.15 Kbytes Page：35 Pages	18M-BIT DDR II SRAM 2-WORD BURST OPERATION Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Pipelined double data rate operation • Common data input/output bus • Two-tick burst for low DDR transaction size • Two inpu 文件：517.15 Kbytes 页数：35 Pages	RENESAS 瑞萨	RENESAS

更多UPD44164362BF5-E35-EQ3-A供应商更新时间2025-10-4 15:01:00