MOS INTEGRATED CIRCUIT

Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA package (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Pipelined double data rate operation • Common data input/output bus • Two-tick burst for low DDR transaction size •

文件：580.71 Kbytes 页数：42 Pages

RENESAS

瑞萨

18M-BIT DDR II SRAM 2-WORD BURST OPERATION

Features • 1.8 ± 0.1 V power supply • 165-pin PLASTIC BGA (13 x 15) • HSTL interface • PLL circuitry for wide output data valid window and future frequency scaling • Pipelined double data rate operation • Common data input/output bus • Two-tick burst for low DDR transaction size • Two inpu

文件：517.15 Kbytes 页数：35 Pages

RENESAS

瑞萨

BGA

NEC

瑞萨

上传：上海鑫科润电子科技有限公司

BGA

RENESAS/瑞萨

上传：深圳市中飞凌科技有限公司

BGA

RENESAS/瑞萨

上传：深圳市中飞凌科技有限公司