4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

Descriptiond The μPD434016A is a high speed, low power, 4,194,304 bits (262,144 words bye 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD434016A is packaaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

文件：448.57 Kbytes 页数：14 Pages

NEC

瑞萨

4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

Descriptiond The μPD434016A is a high speed, low power, 4,194,304 bits (262,144 words bye 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD434016A is packaaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

文件：448.57 Kbytes 页数：14 Pages

NEC

瑞萨

4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

Descriptiond The μPD434016A is a high speed, low power, 4,194,304 bits (262,144 words bye 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD434016A is packaaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

文件：448.57 Kbytes 页数：14 Pages

NEC

瑞萨

4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

Descriptiond The μPD434016A is a high speed, low power, 4,194,304 bits (262,144 words bye 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD434016A is packaaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

文件：448.57 Kbytes 页数：14 Pages

NEC

瑞萨

4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT

Descriptiond The μPD434016A is a high speed, low power, 4,194,304 bits (262,144 words bye 16 bits) CMOS static RAM. Operating supply voltage is 5.0 V ± 0.5 V. The μPD434016A is packaaged in 44-pin plastic SOJ and 44-pin plastic TSOP (II).

文件：448.57 Kbytes 页数：14 Pages

NEC

瑞萨