UPD43257BGU-85L-A规格书应用电路市场行情-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD43257BGU-85L-A	文件：676.64 Kbytes Page：22 Pages	MOS INTEGRATED CIRCUIT Features • 32,768 words by 8 bits organization • Fast access time: 70, 85 ns (MAX.) • Low VCC data retention: 2.0 V (MIN.) • Two Chip Enable inputs: /CE1, CE2 文件：676.64 Kbytes 页数：22 Pages	RENESAS 瑞萨	RENESAS
UPD43257BGU-85L-A	文件：197.96 Kbytes Page：24 Pages	MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 文件：197.96 Kbytes 页数：24 Pages	NEC 瑞萨	NEC
UPD43257BGU-85LL	文件：197.96 Kbytes Page：24 Pages	MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 文件：197.96 Kbytes 页数：24 Pages	NEC 瑞萨	NEC
UPD43257BGU-85LL	文件：157.42 Kbytes Page：20 Pages	256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N 文件：157.42 Kbytes 页数：20 Pages	NEC 瑞萨	NEC
UPD43257BGU-85LL	文件：676.64 Kbytes Page：22 Pages	MOS INTEGRATED CIRCUIT Features • 32,768 words by 8 bits organization • Fast access time: 70, 85 ns (MAX.) • Low VCC data retention: 2.0 V (MIN.) • Two Chip Enable inputs: /CE1, CE2 文件：676.64 Kbytes 页数：22 Pages	RENESAS 瑞萨	RENESAS

更多UPD43257BGU-85L-A供应商更新时间2025-10-5 18:40:00