首页>UPD43256BGW-A12X-9KL>规格书详情
UPD43256BGW-A12X-9KL中文资料瑞萨数据手册PDF规格书
相关芯片规格书
更多- UPD43256BGW-A12-9JL
- UPD43256BGW-A10-9KL
- UPD43256BGW-A12-9KL
- UPD43256BGW-A10X-9JL
- UPD43256BGW-A12X-9JL
- UPD43256BGW-A10-9KL
- UPD43256BGW-A10-9KL
- UPD43256BGW-A12-9KL
- UPD43256BGW-A10X-9KL-A
- UPD43256BGW-A12-9JL-A
- UPD43256BGW-A10X-9KL
- UPD43256BGW-A12-9KL-A
- UPD43256BGW-A12X-9JL
- UPD43256BGW-A12-9JL
- UPD43256BGW-A12X-9JL-A
- UPD43256BGW-A12-9KL
- UPD43256BGW-A10X-9JL
- UPD43256BGW-A10-9KL-A
UPD43256BGW-A12X-9KL规格书详情
描述 Description
The μPD43256B-X is a high speed, low power, and 262,144 bits (32,768 words by 8 bits) CMOS static RAM.
The μPD43256B-X is an extended-operating-temperature version of the μPD43256B (X version : TA = –25 to +85°C). And A and B versions are low voltage operations. Battery backup is available.
The μPD43256B-X is packed in 28-pin PLASTIC TSOP (I) (8 x 13.4 mm).
特性 Features
• 32,768 words by 8 bits organization
• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)
• Operating ambient temperature: TA = –25 to +85 °C
• Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V)
• Low VCC data retention: 2.0 V (MIN.)
• /OE input for easy application
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
11250 |
原厂直销,现货供应,账期支持! |
询价 | ||
NEC |
01+ |
TSOP-28 |
94 |
原装现货海量库存欢迎咨询 |
询价 | ||
RENESAS/瑞萨 |
2450+ |
TSSOP |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
NEC |
2402+ |
TSOP-28 |
8324 |
原装正品!实单价优! |
询价 | ||
24+ |
TSSOP |
1037 |
询价 | ||||
原厂正品 |
23+ |
SSOP-28P |
6000 |
原装正品,假一罚十 |
询价 | ||
NEC |
2025+ |
TSOP-28 |
3550 |
全新原厂原装产品、公司现货销售 |
询价 | ||
NEC |
2023+ |
TSSOP-28 |
50000 |
原装现货 |
询价 | ||
NEC |
23+ |
TSOP-28 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
RENESAS |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 |