UPD43256BGU-B12-A中文资料下载市场行情-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD43256BGU-B12-A	文件：794.06 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 32,768 words by 8 bits organization • Fast access time: 70, 85, 100, 120 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Low VCC data retention: 2.0 V (MIN.) • /OE input for easy application 文件：794.06 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
UPD43256BGU-B12-A	文件：224.55 Kbytes Page：28 Pages	256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 文件：224.55 Kbytes 页数：28 Pages	NEC 瑞萨	NEC
UPD43256BGU-B12	文件：794.06 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 32,768 words by 8 bits organization • Fast access time: 70, 85, 100, 120 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Low VCC data retention: 2.0 V (MIN.) • /OE input for easy application 文件：794.06 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
UPD43256BGU-B12	文件：224.55 Kbytes Page：28 Pages	256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 文件：224.55 Kbytes 页数：28 Pages	NEC 瑞萨	NEC
UPD43256BGU-B12	文件：231.03 Kbytes Page：24 Pages	256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT 文件：231.03 Kbytes 页数：24 Pages	NEC 瑞萨	NEC

更多UPD43256BGU-B12-A供应商更新时间2025-9-26 16:25:00