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UD431000A-BXXX

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A

1M-BITCMOSSTATICRAM128K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A

1M-BITCMOSSTATICRAM128K-WORDBY8-BIT

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-AXX

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-AXXX

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-BXX

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-X

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-X

1M-BITCMOSSTATICRAM128K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-XXL

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-XXLL

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=0to70°C •LowVCCdataretention:2.0V(MIN.) •OutputEnablei

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

UPD431000A-XXX

MOSINTEGRATEDCIRCUIT

Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
NEC
21+
DIP32
6000
绝对原裝现货
询价
NEC
22+
DIP-32
4650
询价
NEC
2023+
DIP-32
50000
原装现货
询价
NEC
23+
DIP
1562
特价库存
询价
NEC
1725+
DIP32
6528
只做原装正品现货!或订货假一赔十!
询价
NEC
DIP32
12000
原装现货,长期供应,终端账期支持
询价
NEC
DIP-32
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
NEC
90+
DIP32
2590
全新原装进口自己库存优势
询价
NEC
2020+
DIP32
35000
100%进口原装正品公司现货库存
询价
NEC
17+
DIP32
9988
只做原装进口,自己库存
询价
更多UPD431000AQ供应商 更新时间2024-6-3 10:14:00