UPD431000AGZ-A10X-KKH技术资料参数市场行情-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
UPD431000AGZ-A10X-KKH	文件：211.06 Kbytes Page：28 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION 文件：211.06 Kbytes 页数：28 Pages	NEC 瑞萨	NEC
UPD431000AGZ-A10X-KJH	文件：772.11 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = –25 to +85 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enabl 文件：772.11 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS
UPD431000AGZ-A10X-KJH	文件：211.06 Kbytes Page：28 Pages	1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION 文件：211.06 Kbytes 页数：28 Pages	NEC 瑞萨	NEC
UPD431000AGZ-A10X-KJH-A	文件：772.11 Kbytes Page：26 Pages	MOS INTEGRATED CIRCUIT Features • 131,072 words by 8 bits organization • Fast access time: 70, 85, 100, 120, 150 ns (MAX.) • Low voltage operation (A version: VCC = 3.0 to 5.5 V, B version: VCC = 2.7 to 5.5 V) • Operating ambient temperature: TA = –25 to +85 °C • Low VCC data retention: 2.0 V (MIN.) • Output Enabl 文件：772.11 Kbytes 页数：26 Pages	RENESAS 瑞萨	RENESAS

更多UPD431000AGZ-A10X-KKH供应商更新时间2025-11-20 17:25:00