首页 >UPD431000AGZ-A10L>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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MOSINTEGRATEDCIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1M-BITCMOSSTATICRAM128K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
MOSINTEGRATEDCIRCUIT Features •131,072wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •Operatingambienttemperature:TA=–25to+85°C •LowVCCdataretention:2.0V(MIN.) •OutputEnabl | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
1M-BITCMOSSTATICRAM128K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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