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UPD41257

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41257C-12

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41257C-15

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41257C-20

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41257L-12

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41257L-15

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

UPD41257L-20

262144 X 1-BIT DYNAMIC NMOS RAM

Description TheμPD41257isa262,144-wordby1-bitdynamicNMOSRAMdesignedtooperatefromasingle+5-voltpowersupply.Adouble-polylayerN-channelsilicongatefabricatedprocessprovidesforhighstoragecelldensity,highperformance,anshighreliability.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

BM-41257MD

104.6mm(4.118)matrixheight5횞7squarematrixdisplay

BRIGHTBRIGHT LED ELECTRONICS CORP

步来特电器宁波步来特电器有限公司

BM-41257ND

104.6mm(4.118)matrixheight5횞7squarematrixdisplay

BRIGHTBRIGHT LED ELECTRONICS CORP

步来特电器宁波步来特电器有限公司

KM41257A

256KX1BitDynamicRAMwithPage/NibbleMode

SamsungSamsung semiconductor

三星三星半导体

详细参数

  • 型号:

    UPD41257

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    262144 X 1-BIT DYNAMIC NMOS RAM

供应商型号品牌批号封装库存备注价格
NEC
24+
ZIP-16
212
询价
NEC
23+
DIP-16
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
NEC
3
公司优势库存 热卖中!!
询价
NEC
24+/25+
57
原装正品现货库存价优
询价
NEC
2016+
DIP
6523
只做原装正品现货!或订货!
询价
NEC
23+
DIP
28610
询价
NEC
8921
DIP-24
120
原装现货海量库存欢迎咨询
询价
原装
24+
DIP
2700
全新原装自家现货优势!
询价
NEC
2447
DIP
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
NEC
24+
DIP-24
9600
原装现货,优势供应,支持实单!
询价
更多UPD41257供应商 更新时间2025-5-7 16:00:00