FDD3570

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=43A@TC=25℃ ·DrainSourceVoltage-VDSS=80V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

FDD3570

N-channelEnhancementModePowerMOSFET

Features VDS=100V,ID=40A RDS(ON)

FDS3570

80VN-ChannelPowerTrench??MOSFET

GeneralDescription ThisN-ChannelLogicLevelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers. Features •9A,80V.RDS(ON)=0.020Ω@VGS=10V RDS(ON)=

FDS3570

PowerConverterTopologyandMOSFETSelectionfor48-VTelecom

FDS3570

80VN-ChannelPowerTrenchMOSFET

FDS3570-TP

N-Channel100-V(D-S)MOSFET

Application «LEDBacklighting SynchronousRectifiersforSMPS oPowermanagement «PWMApplication

FM3570

CPUCONFIGURATIONCONTROLLERRegister/MultiplexerforMicroprocessorVID

GeneralDescription TheFairchildFM3570replacestheCPUmotherboard’sconfigurationswitcheswithanelectronicimplementationconsistingofa4/5-bitmultiplexed,1-bitlatchedport,standard2-wirebusinterface,andnon-volatilelatches. Features ■ExtendedOperatingVoltageRange3.0V-5.5

GOT-3570T

SupportsWLANantenna

Introduction TheGOT-3570Tisa5.7fanlesstouchpanelcomputer.ItadoptsAMDGeodeLX800500MHzprocessorandfanlesscoolingsystem.WithCISC-baselowpowerconsumptionprocessor,AMDLX800500MHz,theGOT-3570Tgreatlyimprovestheperformancesuchashardwareexpansion,operatingfunctio

GPTS3570

PHASECONTROLLEDSCR

HH-3570-B

GRABBERSTYLEJ