CMOS EEPROM

Description The μPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory (EEPROM) organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power consumption.

文件：220.54 Kbytes 页数：9 Pages

NEC

瑞萨

CMOS EEPROM

Renesas

瑞萨

CMOS EEPROM

Description The μPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory (EEPROM) organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power consumption.

文件：220.54 Kbytes 页数：9 Pages

NEC

瑞萨

CMOS EEPROM

Description The μPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory (EEPROM) organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power consumption.

文件：220.54 Kbytes 页数：9 Pages

NEC

瑞萨

CMOS EEPROM

Description The μPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory (EEPROM) organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power consumption.

文件：220.54 Kbytes 页数：9 Pages

NEC

瑞萨

CMOS EEPROM

Description The μPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory (EEPROM) organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power consumption.

文件：220.54 Kbytes 页数：9 Pages

NEC

瑞萨