UPD16858BGS-GJG中文资料RENESAS规格书PDF资料数据手册-114ic电子网

UPD16858BGS-GJG中文资料PDF规格书

厂商型号	UPD16858BGS-GJG
功能描述	MOS INTEGRATED CIRCUIT
文件大小	243.06 Kbytes
页面数量	18 页
生产厂商	Renesas Electronics America
企业简称	RENESAS【瑞萨】
中文名称	瑞萨科技有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2024-6-6 17:14:00

FEATURES

• Both normal PWM type (16858B) and synchronous rectification PWM type (16858C) are available.

• Low ON resistance (sum of ON resistances of upper and lower MOS FETs): RON = 0.8 W (TYP)

• Low power consumption to three-phase full-wave PWM driving

• START/STOP pin is provided. Brake is applied in STOP mode.

• Standby pin is provided. Internal circuitry is turned off in standby mode.

• Low current consumption: IDD = 3 mA (MAX), IDD (ST) = 1 mA (MAX), torque command current = 30 mA (MAX)

• Thermal shut-down circuit and current-limiting circuit

• Low-voltage malfunctioning prevention circuit

• FG output function

• Reverse rotation prevention circuit

• Hole bias function

• 30-pin shrink SOP (300 mil)