UPD16856GS中文资料瑞萨数据手册PDF规格书

FEATURES

• Supply voltage for controller block: 5 V, supply voltage for output block: 12 V

3 V input available for the input interface

• Low on-state resistance (total on-state resistance of upper and lower MOS FETs) RON = 1.3 W (TYP.)

• Low power consumption due to 3-phase full-wave PWM drive method

• On-chip hole bias switch (linked with STB pin)

• On-chip IND (FG) pulse switching function, 1-phase output or 3-phase composite output

• START/STOP pin included, acting as a brake during STOP

• Standby pins included, turning off internal circuit in standby

• Low current consumption: IDD = 3 mA (Max.), IDD (ST) = 1 mA (Max.)

• On-chip thermal shutdown circuit

• On-chip current limiting circuit; reference voltage can be set externally

• On-chip low voltage malfunction prevention circuit

• On-chip reverse rotation prevention circuit

• 30-pin plastic shrink SOP (300 mil)