首页 >UPD16855其他被动元件>规格书列表

零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
C16855	文件：3.37415 Mbytes Page：4 Pages	~25째mediumbeamoptimizedforCREEXP-LandXM-L.VariantmadefromPC.	LEDILLEDiL 莱迪尔莱迪尔公司	LEDIL
UPD16855A	文件：134.77 Kbytes Page：28 Pages	DUALHIGH-SIDESWITCHFORUSBAPPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD16855A	文件：309.43 Kbytes Page：30 Pages	MOSINTEGRATEDCIRCUIT FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD16855AG	文件：309.43 Kbytes Page：30 Pages	MOSINTEGRATEDCIRCUIT FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD16855AG	文件：134.77 Kbytes Page：28 Pages	DUALHIGH-SIDESWITCHFORUSBAPPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD16855BC	文件：134.77 Kbytes Page：28 Pages	DUALHIGH-SIDESWITCHFORUSBAPPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD16855BC	文件：309.43 Kbytes Page：30 Pages	MOSINTEGRATEDCIRCUIT FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD16855BG	文件：309.43 Kbytes Page：30 Pages	MOSINTEGRATEDCIRCUIT FEATURES •PchpowerMOSFET,2circuitbuildingin •Over-currentdetectioncircuitisbuiltinanditsresultisoutputtedfromflag-pin(“L”active) •Preventfromdroppingpowersupplybyovercurrentlimitcircuit •Thermalshutdowncircuitbuildingin •UnderVoltageLockedOut(UVLO)ci	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
UPD16855BG	文件：134.77 Kbytes Page：28 Pages	DUALHIGH-SIDESWITCHFORUSBAPPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
UPD16855CG	文件：134.77 Kbytes Page：28 Pages	DUALHIGH-SIDESWITCHFORUSBAPPLICATION DESCRIPTION ThisproductisthepowerswitchICwithovercurrentlimit,usedforthepowersupplybusoftheUniversal-SerialBus(USB). 2circuitbuildsinthePchpowerMOSFETintheswitchpart,andthisproductrealizeslowonresistance(100mΩTYP.)respectively. Andtheovercurrentdete	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC

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