MONOLITHIC QUAD H BRIDGE DRIVER

DESCRIPTION The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors. In addition, a low-voltage malfunction

文件：110.28 Kbytes 页数：16 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Four H-bridge circuits employing power MOS FETs • High-speed PWM drive: Operating frequency: 120 kHz MAX. • Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.) • 30-pin plastic SSOP (7.62 mm (300))

文件：295.08 Kbytes 页数：16 Pages

RENESAS

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • Four H-bridge circuits employing power MOS FETs • High-speed PWM drive: Operating frequency: 120 kHz MAX. • Low-voltage malfunction prevention circuit: Operating voltage: 2.5 V (TYP.) • 30-pin plastic SSOP (7.62 mm (300))

文件：295.08 Kbytes 页数：16 Pages

RENESAS

瑞萨

MONOLITHIC QUAD H BRIDGE DRIVER

DESCRIPTION The µPD16837 is a monolithic quad H bridge driver employing power MOS FETs in the output stage. The MOS FETs in the output stage lower the saturation voltage and power consumption as compared with conventional drivers using bipolar transistors. In addition, a low-voltage malfunction

文件：110.28 Kbytes 页数：16 Pages

NEC

瑞萨