MONOLITHIC 2CH H-BRIDGE DRIVER

DESCRIPTION The µPD168302 is monolithic dual H-bridge driver LSI which uses power MOS FETs in the output stages. By using the MOS process, this driver has substantially improved the voltage loss of the output stage and power consumption as compared with conventional driver using bipolar transisto

文件：86.61 Kbytes 页数：12 Pages

NEC

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MOS INTEGRATED CIRCUIT

FEATURES • 2ch H-Bridge circuit employing power MOS FETs • Charge-pump circuit for low-voltage operation • Low output FET on resistance: 1.0 Ω TYP. 2.0 Ω MAX. (Sum of upper and lower side) • Output current: DC current 0.6 A/ch Peak current 1.0 A/ch • Input logic frequency: 100 kHz • 5 V log

文件：222.97 Kbytes 页数：14 Pages

RENESAS

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MOS INTEGRATED CIRCUIT

FEATURES • 2ch H-Bridge circuit employing power MOS FETs • Charge-pump circuit for low-voltage operation • Low output FET on resistance: 1.0 Ω TYP. 2.0 Ω MAX. (Sum of upper and lower side) • Output current: DC current 0.6 A/ch Peak current 1.0 A/ch • Input logic frequency: 100 kHz • 5 V log

文件：222.97 Kbytes 页数：14 Pages

RENESAS

瑞萨

MONOLITHIC 2CH H-BRIDGE DRIVER

DESCRIPTION The µPD168302 is monolithic dual H-bridge driver LSI which uses power MOS FETs in the output stages. By using the MOS process, this driver has substantially improved the voltage loss of the output stage and power consumption as compared with conventional driver using bipolar transisto

文件：86.61 Kbytes 页数：12 Pages

NEC

瑞萨

Intelligent Power Devices-Protected and Intelligent Power Switches

Renesas

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