MONOLITHIC H BRIDGE DRIVER CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：85.93 Kbytes 页数：12 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High drive current ID(pulse) = 4.2 A MAX. at PW ≤ 200 ms (single pulse) ID(DC) = 1.0 A (DC) • Low-ON resistance (sum of the upper and lower sides MOS FET) RON = 0.4 Ω TYP. at ID = 1.0 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin

文件：254.1 Kbytes 页数：18 Pages

RENESAS

瑞萨

MONOLITHIC H BRIDGE DRIVER CIRCUIT

Renesas

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High drive current ID(pulse) = 4.2 A MAX. at PW ≤ 200 ms (single pulse) ID(DC) = 1.0 A (DC) • Low-ON resistance (sum of the upper and lower sides MOS FET) RON = 0.4 Ω TYP. at ID = 1.0 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin

文件：254.1 Kbytes 页数：18 Pages

RENESAS

瑞萨

MONOLITHIC H BRIDGE DRIVER CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：85.93 Kbytes 页数：12 Pages

NEC

瑞萨

MOS INTEGRATED CIRCUIT

FEATURES • High drive current ID(pulse) = 4.2 A MAX. at PW ≤ 200 ms (single pulse) ID(DC) = 1.0 A (DC) • Low-ON resistance (sum of the upper and lower sides MOS FET) RON = 0.4 Ω TYP. at ID = 1.0 A • Standby function that turns OFF charge pump circuit • Compact surface mount package 16-pin

文件：254.1 Kbytes 页数：18 Pages

RENESAS

瑞萨

Intelligent Power Devices-Protected and Intelligent Power Switches

Renesas

瑞萨

Intelligent Power Devices-Protected and Intelligent Power Switches

Renesas

瑞萨