Low Noise J-FET Input Quad Operational Amplifier

FEATURES  Input Offset Voltage ±2 mV (TYP.)  Input Bias Current 30 pA (TYP.)  Slew Rate 13 V/μs (TYP.)  Unity Gain Frequency 3 MHz (TYP.)  Input Referred Noise Voltage Density 17 nV/ Hz (TYP.) (f = 1 kHz)  Built-In Phase Compensation Circuit  Built-In Output Short Circuit Protection

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Low Power Consumption J-FET Input Quad Operational Amplifier

The μPC834 and 4064 are low power consumption versions operational amplifier of μPC804 and 4084 series with the general-purpose J-FET input. This revolutionary J-FET input operational amplifier realizes low power consumption of ICC 800 μA TYP. and low voltage operation from ± 2 V. Owing to its J-FET • Input Offset Voltage   ±2 mV (TYP.)\n• Input Bias Current    10 pA (TYP.)\n• Slew Rate        3V/μs (TYP.)\n• Unity Gain Frequency   1 MHz (TYP.)\n• Circuit Current      800 μA (TYP.)\n• Operate from ±2 V\n• Built-In Phase Compensation Circuit\n• Built-In Output Short Circuit Protection\n• Standar;

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SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE CAPACITANCE FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance(IR Typically

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SILICON 28V HYPERABRUPT VARACTOR DIODES

Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in single or dual common cathode format in a wide rage of miniature sur

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SOT23 SILICON VARIABLE CAPACITANCE DIODES

SOT23 SILICON VARIABLE CAPACITANCE FEATURES * Close Tolerance C-V Characteristics * High Tuning Ratio * Low IR Enabling Excellent Phase Noise Performance(IR Typically

文件：19.16 Kbytes 页数：2 Pages

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