SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol

文件：289.32 Kbytes 页数：27 Pages

NEC

瑞萨

丝印：6C；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T

文件：419.83 Kbytes 页数：29 Pages

RENESAS

瑞萨

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：1.63019 Mbytes 页数：25 Pages

CEL

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wide band matched IC. µPC8179TK adopts 6-pin lead-less minimol

文件：289.32 Kbytes 页数：27 Pages

NEC

瑞萨

丝印：6C；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES • Low current consumption : ICC = 4.0 mA TYP. @ VCC = 3.0 V • Supply voltage : VCC = 2.4 to 3.3 V • Excellent isolation : ISL = 43.0 dB TYP. @ f = 1.0 GHz ISL = 42.0 dB TYP. @ f = 1.9 GHz ISL = 42.0 dB TYP. @ f = 2.4 GHz • Power gain : GP = 13.5 dB TYP. @ f = 1.0 GHz GP = 15.5 dB T

文件：419.83 Kbytes 页数：29 Pages

RENESAS

瑞萨

SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

文件：434.03 Kbytes 页数：7 Pages

CEL

BIPOLAR ANALOG INTEGRATED CIRCUIT

文件：1.63019 Mbytes 页数：25 Pages

CEL

Package：6-SMD，扁平引线；包装：散装 类别：RF/IF，射频/中频和 RFID 射频放大器 描述：IC RF AMP GP 2.4GHZ 6-MINIMOLD

CEL